BSR92P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
VDS
• P-Channel
-250
V
11
W
-0.14
A
RDS(on),max
• Enhancement mode / Logic level
ID
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Footprint compatible to SOT23
PG-SC59
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
Type
Package
Tape and Reel Information
Marking
Halogen-free
Packing
BSR92P
PG-SC59
H6327 = 3000 pcs. / reel
LD
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
steady state
Continuous drain current
ID
T A=25 °C
-0.14
T A=70 °C
-0.11
-0.56
Pulsed drain current
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
I D=-0.14 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD class
T C=25 °C
JESD22-A114 (HBM)
24
mJ
±20
V
0.5
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
Rev 1.05
A
page 1
2015-07-24
BSR92P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint,
steady state
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 µA
-250
-
-
Gate threshold voltage
V GS(th)
V DS=V GS,
I D=-130 µA
-2
-1.5
-1
Zero gate voltage drain current
I DSS
V DS=-250 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-250 V, V GS=0 V,
T j=150 °C
-
-10
-100
V GS=-20 V, V DS=0 V
-
-10
-100
V GS=-2.8 V,
I D=-0.025 A
-
11
20
V GS=-4.5 V, I D=0.13 A
-
9
13
V GS=-10 V,
I D=-0.14 A
-
8
11
0.1
0.3
-
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Rev 1.05
I GSS
R DS(on)
g fs
|V DS|>2|I D|R DS(on)max,
I D=-0.11 A
page 2
V
µA
nA
W
S
2015-07-24
BSR92P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
82
109
-
12
16
Dynamic characteristics3)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
5
8
Turn-on delay time
t d(on)
-
6.4
9.0
Rise time
tr
-
6.3
9.0
Turn-off delay time
t d(off)
-
75.0
112
Fall time
tf
-
71.0
163
Gate to source charge
Q gs
-
-0.2
-0.3
Gate to drain charge
Q gd
-
-1.2
-1.8
Gate charge total
Qg
-
-3.6
-4.8
Gate plateau voltage
V plateau
-
-2.7
-
V
-
-
-0.14
A
-
-
-0.56
-
-0.8
-1.2
V
-
66
-
ns
-
125
-
nC
V GS=0 V, V DS=-25 V,
f =1 MHz
V DD=-125 V,
V GS=-10 V,
I D=-0.14 A, R G,ext=6 W
pF
ns
Gate Charge Characteristics2), 3)
V DD=-200 V, I D=0.14 A, V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time3)
t rr
Reverse recovery charge
2)
3)
3)
Q rr
T C=25 °C
V GS=0 V, I F=0.14 A,
T j=25 °C
V R=125 V, I F=|I S|,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Defined by design. Not subjected to production test
Rev 1.05
page 3
2015-07-24
BSR92P
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); |V GS|≥10 V
0.6
0.15
0.5
0.1
-ID [A]
Ptot [W]
0.4
0.3
0.2
0.05
0.1
0
0
0
40
80
120
160
0
40
TA [°C]
80
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
100
103
limited by on-state
resistance
100 µs
1 ms
0.5
102
10 ms
0.2
10-1
ZthJS [K/W]
0.1
-ID [A]
100 ms
DC
0.05
101
0.02
0.01
single pulse
10-2
100
10-3
10-1
10-1
100
101
102
103
-VDS [V]
Rev 1.05
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
page 4
2015-07-24
BSR92P
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.5
14
4.5 V
10 V
-2.5 V
6V
0.4
3.5 V
-3 V
12
3V
ID [A]
RDS(on) [W]
0.3
0.2
10
-3.5 V
-4.5 V
-6 V
8
2.5 V
-10 V
0.1
2V
0
6
0
1
2
3
4
5
0
0.1
VDS [V]
0.2
0.3
0.4
0.12
0.16
-ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
0.5
0.4
25 °C
150 °C
0.4
0.3
gfs [S]
-ID [A]
0.3
0.2
0.2
0.1
0.1
0
0
1
2
3
0
0.00
4
-VGS [V]
Rev 1.05
0.04
0.08
-ID [A]
page 5
2015-07-24
BSR92P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-0.14 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-130 µA
2.5
30
25
2
min
-VGS(th) [V]
RDS(on) [mW]
20
15
98%
typ
1.5
1
10
max
10V
0.5
5
0
-60 -40 -20 0
0
20 40 60 80 100 120 140 160
-60
-20
20
60
100
140
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
1000
1
100
25 °C
0.1
Ciss
IF [A]
C [pF]
150 °C
Coss
10
0.01
25°C, 98%
Crss
150°C, 98%
1
0.001
0
20
40
60
80
100
-VDS [V]
Rev 1.05
0
0.4
0.8
1.2
1.6
-VSD [V]
page 6
2015-07-24
BSR92P
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=-0.14 A pulsed
parameter: T j(start)
parameter: V DD
10
100
8
50 V
10-1
6
-VGS [V]
-IAV [A]
25 °C
100 °C
125 V
4
200 V
125 °C
2
0
10-2
100
101
102
0
103
1
tAV [µs]
2
3
-Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
300
V GS
290
Qg
280
-VBR(DSS) [V]
270
260
250
240
V gs(th)
230
220
Q g(th)
210
200
-60
-20
20
60
100
Q sw
Q gs
140
Q gate
Q gd
Tj [°C]
Rev 1.05
page 7
2015-07-24
BSR92P
Package Outline
SC-59: Outline
Footprint
Packaging
Tape
Dimensions in mm
Rev 1.05
page 8
2015-07-24
BSR92P
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev 1.05
page 9
2015-07-24